Product Features:
High Frequency
Broadband Continuous Wave Amplifier
Temperature Protection Function
High Reliability Circuit Design
Operating Temperature: -40℃ to +65℃
Storage Temperature: -50℃ to +85℃
Power Amplifier Operating within the 81 to 86 GHz frequency range, these power amplifiers are engineered to meet the demands of next-generation high-frequency applications such as automotive radar, high-speed wireless communications, and advanced sensing systems. Leveraging state-of-the-art semiconductor technologies, including GaN and InP processes, these amplifiers deliver exceptional gain, high output power, and superior efficiency while maintaining linearity across the W-band spectrum.
Key Features:
Frequency Range: 81–86 GHz (W-band)
Output Power: Up to +25 dBm (typical, depending on technology)
Gain: 15–25 dB with flat gain response over the bandwidth
Efficiency: High power-added efficiency (PAE) optimized for continuous wave (CW) operation
Linearity: Low intermodulation distortion for precise signal amplification
Compact Design: Integration friendly with planar circuits for compact system-level implementations
Applications:
Automotive radar for advanced driver-assistance systems (ADAS)
High-resolution imaging and security scanning
Satellite communications and backhaul links
Millimeter-wave broadband wireless networks
Innovative architectures and advanced fabrication methods enable these power amplifiers to push the boundaries of millimeter-wave amplification, offering reliable performance in compact, energy-efficient modules suitable for integration into complex mmWave front-end systems.
Product Features:
High Frequency
Broadband Continuous Wave Amplifier
Temperature Protection Function
High Reliability Circuit Design
Operating Temperature: -40℃ to +65℃
Storage Temperature: -50℃ to +85℃
Power Amplifier Operating within the 81 to 86 GHz frequency range, these power amplifiers are engineered to meet the demands of next-generation high-frequency applications such as automotive radar, high-speed wireless communications, and advanced sensing systems. Leveraging state-of-the-art semiconductor technologies, including GaN and InP processes, these amplifiers deliver exceptional gain, high output power, and superior efficiency while maintaining linearity across the W-band spectrum.
Key Features:
Frequency Range: 81–86 GHz (W-band)
Output Power: Up to +25 dBm (typical, depending on technology)
Gain: 15–25 dB with flat gain response over the bandwidth
Efficiency: High power-added efficiency (PAE) optimized for continuous wave (CW) operation
Linearity: Low intermodulation distortion for precise signal amplification
Compact Design: Integration friendly with planar circuits for compact system-level implementations
Applications:
Automotive radar for advanced driver-assistance systems (ADAS)
High-resolution imaging and security scanning
Satellite communications and backhaul links
Millimeter-wave broadband wireless networks
Innovative architectures and advanced fabrication methods enable these power amplifiers to push the boundaries of millimeter-wave amplification, offering reliable performance in compact, energy-efficient modules suitable for integration into complex mmWave front-end systems.
| Parameter Name | Minimum Value | Typical Value | Maximum Value | Unit | Remark |
|---|---|---|---|---|---|
| Frequency | 81 | 86 | GHz | ||
| Small signal gain | 20 | dB | |||
| Input Power | 25 | dBm | |||
| Output Power | 33.5 | dBm | |||
| Input VSWR | 1.5 | - | |||
| Output VSWR | 2.0 | ||||
| Supply Voltage | 18 | 20 | V | ||
| Saturation Current | 800 | mA |
